Noise in CMOS Circuits

This course covers the intricate concept of noise in CMOS RF integrated circuits, with a particular focus on various noise sources, sampled noise on a capacitor, and noise in a MOS device. For instance, it delves into the production of noise in a resistor due to the vibration of electrons and how this can be modeled as a noiseless resistor in series with a noise voltage. The course also explores the Thevenin and Norton equivalent transformations and their application in representing a resistor. Additionally, it provides a comprehensive understanding of how noise is calculated in a network full of resistors and capacitors. The course further extends to the noise in the MOSFET, explaining the behavior of electrons in the channel of a MOSFET, and how this activity increases with temperature. It also discusses how the noise current is proportional to the number of electrons available in the channel and how to model this noise over all regions of operation using a formula involving the Boltzmann constant and the inversion charge.