-
-
November 21, 2023 at 3:25 pmJulio Mariano GeronimoSubscriber
-
November 27, 2023 at 4:54 pmDan DvorscakAnsys Employee
Hello Julio,
According to the HiSim manual,
"Different from the drift approximation (see for example Eq. (30)), the drift-di usion approximation does
not require a threshold voltage parameter Vth for describing device performances. The MOSFET device
parameters such as the oxide thickness TOX and the substrate doping concentration NSUBC
determine the complete MOSFET behavior including the subthreshold characteristics automatically and
consistently."I'm not at libert to share the specific equations or specification directly (if so, we would publish them in the online help) but they can be downloaded from the the HiSim Research Center:
HiSIM Download | HiSIM Research Center (hiroshima-u.ac.jp)
You mentioned a data sheet, but your screen cap just shows our default model parameter set. Please note, that those values are set to mach the parameter defaults as defined by the HiSim model writers, and are not indicative of any physical semiconductor process. Typically you would be given in a data sheet, or more likely the model would be pre setup in a SPICE file, by the semiconductor model vendor themselves.Â
Best regards,
-Dan
-
- The topic ‘How to identify the Threshold Voltage of transistor model?’ is closed to new replies.
- HFSS Incident Plane Wave excitement mode
- Question for Maxwell
- Simulation of capacitor combining eddy currents with displacement currents
- How to calculate eddy and hysteresis losses of the core?
- How to calculate capacitance using Fields Calculator in HFSS?
- Ansys Maxwell 3D – eddy current
- How to determine initial position in motion setup
- Leakage inductance realization in transformer
- dq graph non-conformity
- How to customize pulse waveform and injection site in microstrip array
-
1131
-
468
-
460
-
225
-
201
© 2024 Copyright ANSYS, Inc. All rights reserved.