Learning Forum

[Julio Mariano Geronimo]

I am building an LNA circuitry, and I am currently carrying out MOSFET transistor biasing.

Below is the transistor model that I am using: 

I understand that in order for the transistor to be active, gate voltage (Vg) must be greater than threshold voltage (Vth). According to the picture below, the threshold voltage is 1V (Please correct me if I am wrong):

I would like the transistor to operate as an amplifier, therefore, drain voltage (Vd) must be greater than Vg - Vth. In order to find my Vd, I must know my drain current (Id). Because Vd = Id x Rd (Rd = Drain resistance). 

 

To find Id, the formula is as below: 

 

The model of the transistor that I am using does not provide these 2 parameters, . 

 

May I know is there a way to obtain those parameters? Or is there an alternative way to calculate the drain current, Id? 

 

Below is my circuitry schematic:

[HDLI]

Hello Julio,

        I think you want to simulate dynamic mosfet characteristics. There may be three options.

       1). Please check if dynamic mosfet component could be useful for you.

       2). Please find if you have Spice model for your design, to see if you could import the Spice model into Simplorer.

       3). You could use "Characterize Device" to build your own dynamic mosfet.

        Thanks.

HDLI