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February 23, 2023 at 2:41 pm
HAOYU LIU
SubscriberI am doing the UTC PD simulation with charge now, the materials are Si and Ge. for the Ge, I need to set the taun, taup andNref.The default value 1e-5 is too larege that the responsivity means almost all the photogenerated carriers are collected. I have checked your examples of Ge pd, three examples use three parameters 1e-8,1e-9,1e-10. Which one is right? Or is there some reference for the parameters setting of Ge?
Also, when I open the high field mobility model, the simulation always error, how to do the setting with this model?
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February 23, 2023 at 9:02 pm
Guilin Sun
Ansys EmployeeI personally think that there is no "right" value for all the cases, since it depends on the material and process techniques . You can choose one that fits your device, and the result is reasonable.Â
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As for the high field mobility, you may choose different mechanism and test if it works for you. You may also modify the vsta values.Â
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