Learning Forum

[Sungmin Yoon]

Hello,

 

I'm currently running CHARGE, and starting from the scratch.

I made a layer as below, to see if I can simulate charge transfer via electron tunneling under bias:

ohmic metal contact (top) -- three insulator layers (midde) -- p-Si (below insulator layers) -- ohmic metal contact (bottom)

I applied negative single-sweep type bias(i.e., fixed negative bias) at top metal contact, and applied GND at bottom metal contact(i.e., fixed 0V bias), as boundary condition. 

After running Charge monitor, I got some errors, including "no active (semiconductor) materials were found in the simulation region", although I have p-type Si and it is defined as 'semiconductor' in materials tree. 

Which parameters should I fix? 

Thanks,

Sungmin

 

 

 

 

[Guilin Sun]

CHARGE is to simulate the carrier transportation in semiconductor. Insulator by name does not allow carrier to pass. So please take some time to think what is the purpose to have insulators between contacts. If they are used to reduce the voltage you can apply smaller voltage. Maybe this configuration of the actual device has such insulators. However it does not work for simulation. You may make such insulator to be "semiconductor" with large bandgap: Tips for creating a new semiconductor material 

[Sungmin Yoon]

Just wondering - it is actually some kinda device, and investigating charge behavior in those insulators is my interest. Is there any modes(like CHARGE, FDTD.. etc) that I can utilize in Lumerical, or, Ansys?

  

[Sungmin Yoon]

Thank you for your prompt & kind reply! You made my day. 

Regards,

Sungmin 

[Guilin Sun]

Hi Sungmin,

 

The charge behavior in semiconductor can be simulated by CHARGE. However insulator has no charge by theory. thus you need to modify it to be semiconductor.