MOS capacitor – changing the DC permittivity of the oxide
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I have a question regarding your MOS capacitor example:
https://optics.ansys.com/hc/en-us/articles/360042760633-Metal-oxide-semiconductor-MOS-capacitor
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I took your example file and introduced the following changes:
1.     I increased the doping of Si to 10^23;
2.     I placed an electric field monitor in the oxide layer.
Then I started varying the DC permittivity of the oxide. For a given applied voltage, I expect the electric field inside of the oxide to drop significantly when the DC permittivity is increased. However, no such drop is observed. Why is that the case? Or is there any mistake with my simulation setup?
Thank you!
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Do you know the mechanism that increasing DC permittivity makes the electric field dropping? please check the solver physics and see if it includes such mechanism:
https://optics.ansys.com/hc/en-us/articles/360034917693-CHARGE-solver-introduction
https://optics.ansys.com/hc/en-us/articles/360034918633-CHARGE-solver-Simulation-objectÂ
You may enable the "high field" function in material properties and test which one is helpful:Â
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