Learning Forum

[1906072]

I am working on Indoor Perovskite Photovoltaics and performing 3D simulations using Ansys Lumerical Charge. Most research papers, like "Investigating the influence of ambient light spectrum on the thickness and band gap of halide-perovskite for indoor photovoltaic application" by Borah et al., often provide detailed defect data (such as defect type, energetic distribution, reference for defect energy level Et, energy level with respect to reference, characteristic energy, etc.), alongside doping concentration, typically for SCAPS 1D simulations.

I can input doping concentration in Ansys Lumerical Charge, but I am unable to find where or how to input defect-related information like:

• Defect Type (Neutral, Acceptor, Donor)
• Energetic Distribution (e.g., Gaussian)
• Reference for Defect Energy Level
• Characteristic Energy

The attached table contains an example from the paper I am referencing.

Is there a way to include this defect data in Ansys Lumerical Charge, or am I missing an option or setting? If so, how can I input or configure these parameters for Charge simulations? Any help or guidance would be greatly appreciated, especially if there are specific steps or workarounds that enable this kind of detailed defect modeling in Lumerical Charge.

[Guilin Sun]

Somehow my reply was not successfully submitted.

CHARGE takes most of the important material properties into account. Please check this article for semiconductor material properties: https://optics.ansys.com/hc/en-us/articles/360034919113-Semiconductor-Material-Model-Properties

Usually such loss may be reprented by different lossy mechanisms. Please consider it.