How to achieve graded doping file in the charge

- February 27, 2023 at 5:08 am
  
  HAOYU LIU
  Subscriber
  
  I am doing the simulation about the UTC-PD in the charge. In the p absorb layer, the paper shows the graded dpoing rather than the abrupt doping. How to achieve this in the charge? The graded doping file can create a induced electrical field in the absorb layer. Which type of doping should I use?
- February 28, 2023 at 5:49 pm
  
  Guilin Sun
  Ansys Employee
  
  You can define your doping profile and then import it into simulation. Please refer this https://optics.ansys.com/hc/en-us/articles/360042646053-3D-pillar-silicon-solar-cell
  or if it is Gaussian, you can use smaller region and let the rest to be fully decarese to the background doping.
  Please try.