-
-
March 18, 2024 at 2:10 pmhan ZSubscriber
I now have a car scale chip of gallium nitride. Now I need to model the switch and carry out simulation test in the motor drive system built by Simplorer. Please tell me how to model. I tried to use power MOSFET for feature-based modeling, but I failed. Please help, thank you.
-
April 1, 2024 at 2:32 pmHDLIAnsys Employee
Hello Han,
    Please review the online help manual. Device Characterization Wizard. To start the device characterization wizard, click Twin Builder > Characterize Device > Semiconductors to open the Characterize Device dialog. You could find tutorial in the bottom of the link and I suggest you using Power MOSFET (basic dynamic). Addtionally, the gate drive should be a recommended circuit from manufacture and present real power, not simple signal. Please use a simple circuit to test if the MOSFET block works well before building a completed system circuit.     Â
HD
-
- The topic ‘GaN HEMT characterization modeling’ is closed to new replies.
- HFSS Incident Plane Wave excitement mode
- Question for Maxwell
- Simulation of capacitor combining eddy currents with displacement currents
- How to calculate eddy and hysteresis losses of the core?
- Ansys Maxwell 3D – eddy current
- How to determine initial position in motion setup
- dq graph non-conformity
- How to customize pulse waveform and injection site in microstrip array
- 180 Degree Phase Shift When Measuring S21
- Simplorer+Maxwell Cosimulation results and Maxwell results mismatch
-
1236
-
543
-
523
-
225
-
209
© 2024 Copyright ANSYS, Inc. All rights reserved.