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March 17, 2024 at 7:35 am
sagar
SubscriberIs there any example file (charge simulation) available for silicon-based SPAD?Â
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March 18, 2024 at 6:58 pm
Guilin Sun
Ansys EmployeeAs long as the material properties are proper, I believe you can simulate the PAD device. I would like to encourage you to do the simulation with CHARGE. Please refer to the online examples and let me know if you have any questions from the simulation.
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March 18, 2024 at 10:22 pm
sagar
SubscriberDo you have any example file of Si-based SPAD where the dark current and I-V curves have already been calculated? It would be easy for me to start with.Â
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March 18, 2024 at 10:45 pm
Guilin Sun
Ansys EmployeeAs I mentioned, there is no difference whatever the semiconductor material you use for simulation of such device. Just follow the examples online to set up your simulation and contact us should you have questions.
https://optics.ansys.com/hc/en-us/articles/6676559298323-SPAD-Secondary-Emission-and-Absorption
https://optics.ansys.com/hc/en-us/articles/18772400259859-SPAD-dark-count-rate-simulation
https://optics.ansys.com/hc/en-us/articles/11910437549203-Optical-crosstalk-in-SPAD-due-to-secondary-emissionÂ
https://optics.ansys.com/hc/en-us/articles/360042331634-10-V-Ge-on-Si-APD-with-Si-multiplicationÂ
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- The topic ‘Example file for Silicon based Single photon avalanche detector (SPAD)’ is closed to new replies.
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