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November 20, 2023 at 2:30 pm
Sungmin Yoon
SubscriberHello,
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Currently I'm running transient simulation in Lumerical CHARGE, to see semiconductor device's electron & hole behavior as a function of time.Â
Structure is as follows: Metal/Semiconductor/p-Si/Metal.
Positive bias is applied in the form of pulse to one metal contact for 3 us, and ground is applied in the other metal contact.Â
I reffered to this article, seems that it's not quite adquate to my situation but anyway, it dosen't work. Modulated 'init. step size' to minimum, turned on 'gradient mixing'.
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Problems are as below:
- Diverge at t=0, if I set 'convergence method' as 'limit update'
- Diverge at t=10ns, if I set convergence method as 'linear search cubic' or 'linear search bank rose'.
Meshing is fine.
Here's the geometry and settings:
Â
Â
Regards,
Sungmin
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November 24, 2023 at 12:07 am
Amrita Pati
Ansys EmployeeHi Sungmin,Â
I will come back to you when I hear back from the R&D team on this post as well.
Regards,
Amrita -
November 24, 2023 at 12:16 am
Sungmin Yoon
SubscriberMuch appreciated, Amrita.
Â
Just so you know, like previous post, the theree layers as 'Semiconductor' titled in caputred image, those are actually "oxide-nitride-oxide".
Â
Thanks,
Sungmin  Â
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