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Ansys Learning Forum › Forums › Discuss Simulation › Electronics › GaN HEMT characterization modeling › Reply To: GaN HEMT characterization modeling

April 1, 2024 at 2:32 pm
HDLI
Ansys Employee

Hello Han,

       Please review the online help manual. Device Characterization Wizard. To start the device characterization wizard, click Twin Builder > Characterize Device > Semiconductors to open the Characterize Device dialog. You could find tutorial in the bottom of the link and I suggest you using Power MOSFET (basic dynamic). Addtionally, the gate drive should be a recommended circuit from manufacture and present real power, not simple signal. Please use a simple circuit to test if the MOSFET block works well before building a completed system circuit.          

HD

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