Hi Amrita,
Finally, I was successfully able to do it from scratch. What I think the problem was, while adding the material I did 2 things, 1- Before adding the ternarry alloys, I added all the related primary materials (like AlN and GaN for AlGaN). 2- While adding the ternarry alloys, I was going with the "create semi" option, which wasn't working and when I added with "create new" option, it worked.
worth to mention that when I added a gold contacts for the device with ternary alloys added in "create semi" option it was running.
Also I would like to mention that still at some point this happened that it shows error mentioning couldn't converege the results after xxx iteration, and when I just go back to layout mode > partition > run, it works! I don't know what happened.Â
Other things that I noticed is previously the AlInP layers in the n side were considered as a single domain (Domain 1). Simillary the GaP on the p side. But now the AlInP and GaP layers are considered as seperate domains. Also the order or the position of the layers in the geometry tab is considered when creating the domain (if a layer is not positioned according to the order of the device stack, that layer will be having a domain number corresponding to the order of layers in the geometry tab).