Learning Forum

[gagan6644]

I'm working on a thermal simulation in ANSYS CFX for crystal growth. The model consists of two domains:

• Crystal

• Melt

These are connected via two interfaces:

1. On the crystal side

2. On the melt side

I need to run two separate simulations:

• One with crystal rotation

• One with melt rotation

For melt rotation, I successfully applied a rotating wall boundary condition on the melt domain, and the results look physically reasonable.

However, for the crystal rotation case, I'm facing issues:

• I set a rotating crystal domain.

• The simulation runs without errors.

• But the flow field is not realistic, and I suspect something is wrong with my boundary condition setup.

I've attached a screenshot showing my domain setup and boundary conditions for clarity.
Could someone please help me identify what might be going wrong with the crystal rotation setup?

How should the interfaces between melt and crystal be treated when only one domain is rotating?

 

Any suggestions or insights would be greatly appreciated!

Thanks in advance.

 

[rfblumen]

You mention that the temperature field is not realistic.  Is the issue that the temperature on the crystal side of the interface is much higher than on the melt side?  

I would suggest setting Domain Motion for the Crystal domain to be stationary.  On the Solid Models tab of the Crystal Domain, check the box for Solid Motion and add the angular velocity.

[gagan6644]

Thank you for the reply, I meant flow field is not realistic. 

I tried the way you mentioned, I see the effect of crystal rotation is low comparetively due to the strong buoyancy, there is no sign of crystal rotation at all.