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Which of the following settings are required for a small signal AC simulation by the CHARGE solver?
The time step used in transient simulations by the CHARGE solver is constant during the entire simulation.
Which of the following can cause a transient CHARGE simulation to diverge?
You have a transient charge simulation that is diverging due to the presence of a global source shutter in the simulation.
Which of the following settings should be changed to avoid divergence?
Operating at high temperatures can negatively affect the performance of a photodiode partly due to the reduction in carriers mobility. Assume that the photodiode we simulated in this section is operating at a temperature of 500K rather than room temperature (300K). Download the simulation file which is the same file as the one used in the transient simulation unit. Make sure that the temperature-dependent models for lattice scattering mobility and velocity saturation are enabled. What would be the amount of reduction in bandwidth of the device when operating at 500K compared to room temperature? Use the same script file provided in the transient simulation unit to calculate bandwidth
Type in your answer in the units of GHz rounded to the closest integer.
You need to simulate the reverse recovery time of a diode at room temperature. Which of the following settings for the CHARGE solver are suitable for this simulation?
You have set up a charge monitor in your simulation however you are not sure if the monitor is correctly aligned with your device. Which one of the following tools will enable you to verify this?
Which simulation object in the following picture contains voltage and current results from the electrical contacts?
Users can specify the intrinsic carrier concentration of a semiconductor material in its material model.
Which of the following effects on semiconductor mobility can be modeled by the CHARGE solver?
Arrange the following steps in the correct order for creating a new alloy material.
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Which of the following determines the end time of a transient CHARGE simulation?
You have a transient CHARGE simulation that is running too slow. You wish to make the simulation run faster. Which of the following actions would make the simulation faster?
Download the simulation file which is the same as the one in the small-signal AC simulations course. If the PIN diode was made of Silicon rather than germanium, its contact cross-section area was 100 um2, and was reverse biased at 0.5V, what would be the value of its capacitance at the frequency of 150 GHz?
Use the script file from here to calculate and plot the capacitance. (Hint: The contact cross-section is the product of the length and width of the electrical contacts of the diode.)
Type your answer in the units of femto farads (fF) with two decimal points precision. For example, if the answer is 1.268, type in 1.27