


{"id":391434,"date":"2024-10-25T23:11:11","date_gmt":"2024-10-25T23:11:11","guid":{"rendered":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/mos-capacitor-changing-the-dc-permittivity-of-the-oxide\/"},"modified":"2024-10-25T23:11:11","modified_gmt":"2024-10-25T23:11:11","slug":"mos-capacitor-changing-the-dc-permittivity-of-the-oxide","status":"publish","type":"topic","link":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/mos-capacitor-changing-the-dc-permittivity-of-the-oxide\/","title":{"rendered":"MOS capacitor &#8211; changing the DC permittivity of the oxide"},"content":{"rendered":"<p>&lt;p class=&#8221;MsoNormal&#8221;&gt;I have a question regarding&nbsp;your MOS capacitor example:&lt;\/p&gt;&lt;p class=&#8221;MsoNormal&#8221;&gt;<a href=\"https:\/\/optics.ansys.com\/hc\/en-us\/articles\/360042760633-Metal-oxide-semiconductor-MOS-capacitor\">https:\/\/optics.ansys.com\/hc\/en-us\/articles\/360042760633-Metal-oxide-semiconductor-MOS-capacitor<\/a>&lt;\/p&gt;&lt;p class=&#8221;MsoNormal&#8221;&gt;&nbsp;&lt;\/p&gt;&lt;p class=&#8221;MsoNormal&#8221;&gt;I took your example file and introduced the following changes:&lt;\/p&gt;&lt;p class=&#8221;MsoListParagraphCxSpFirst&#8221; style=&#8221;text-indent: -.25in; mso-list: l0 level1 lfo1;&#8221;&gt;&lt;!&#8211; [if !supportLists]&#8211;&gt;&lt;span style=&#8221;mso-bidi-font-family: Aptos; mso-bidi-theme-font: minor-latin;&#8221;&gt;&lt;span style=&#8221;mso-list: Ignore;&#8221;&gt;1.&lt;span style=&#8221;font: 7.0pt &#8216;Times New Roman&#8217;;&#8221;&gt;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; &lt;\/span&gt;&lt;\/span&gt;&lt;\/span&gt;&lt;!&#8211;[endif]&#8211;&gt;I increased the doping of Si to 10^23;&lt;\/p&gt;&lt;p class=&#8221;MsoListParagraphCxSpLast&#8221; style=&#8221;text-indent: -.25in; mso-list: l0 level1 lfo1;&#8221;&gt;&lt;!&#8211; [if !supportLists]&#8211;&gt;&lt;span style=&#8221;mso-bidi-font-family: Aptos; mso-bidi-theme-font: minor-latin;&#8221;&gt;&lt;span style=&#8221;mso-list: Ignore;&#8221;&gt;2.&lt;span style=&#8221;font: 7.0pt &#8216;Times New Roman&#8217;;&#8221;&gt;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp; &lt;\/span&gt;&lt;\/span&gt;&lt;\/span&gt;&lt;!&#8211;[endif]&#8211;&gt;I placed an electric field monitor in the oxide layer.&lt;\/p&gt;&lt;p class=&#8221;MsoNormal&#8221;&gt;Then I started varying the DC permittivity of the oxide. For a given applied voltage, I expect the electric field inside of the oxide to drop significantly when the DC permittivity is increased. However, no such drop is observed. Why is that the case? Or is there any mistake with my simulation setup?&lt;\/p&gt;&lt;p class=&#8221;MsoNormal&#8221;&gt;<img decoding=\"async\" src=\"https:\/\/innovationspace.ansys.com\/forum\/wp-content\/uploads\/sites\/2\/2024\/10\/25-10-2024-1729897755-dc_600.PNG\" alt=\"\" \/>&lt;\/p&gt;&lt;p class=&#8221;MsoNormal&#8221;&gt;Thank you!&lt;\/p&gt;&lt;p class=&#8221;MsoNormal&#8221;&gt;<img decoding=\"async\" src=\"https:\/\/innovationspace.ansys.com\/forum\/wp-content\/uploads\/sites\/2\/2024\/10\/25-10-2024-1729897794-mceclip2.png\" \/>&lt;\/p&gt;<\/p>\n","protected":false},"template":"","class_list":["post-391434","topic","type-topic","status-publish","hentry"],"aioseo_notices":[],"aioseo_head":"\n\t\t<!-- All in One SEO 4.9.10 - aioseo.com -->\n\t<meta name=\"description\" content=\"I have a question regarding your MOS capacitor example:https:\/\/optics.ansys.com\/hc\/en-us\/articles\/360042760633-Metal-oxide-semiconductor-MOS-capacitor I took your example file and introduced the following changes:1. 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I increased the doping of Si to 10^23;","canonical_url":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/mos-capacitor-changing-the-dc-permittivity-of-the-oxide\/","robots":"max-image-preview:large","keywords":"","webmasterTools":{"miscellaneous":""},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"BreadcrumbList","@id":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/mos-capacitor-changing-the-dc-permittivity-of-the-oxide\/#breadcrumblist","itemListElement":[{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum#listItem","position":1,"name":"Home","item":"https:\/\/innovationspace.ansys.com\/forum","nextItem":{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum\/topics\/#listItem","name":"Topics"}},{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum\/topics\/#listItem","position":2,"name":"Topics","item":"https:\/\/innovationspace.ansys.com\/forum\/topics\/","nextItem":{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/mos-capacitor-changing-the-dc-permittivity-of-the-oxide\/#listItem","name":"MOS capacitor &#8211; changing the DC permittivity of the oxide"},"previousItem":{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum#listItem","name":"Home"}},{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/mos-capacitor-changing-the-dc-permittivity-of-the-oxide\/#listItem","position":3,"name":"MOS capacitor &#8211; changing the DC permittivity of the oxide","previousItem":{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum\/topics\/#listItem","name":"Topics"}}]},{"@type":"Organization","@id":"https:\/\/innovationspace.ansys.com\/forum\/#organization","name":"Ansys Learning Forum","description":"Ansys Innovation Space","url":"https:\/\/innovationspace.ansys.com\/forum\/"},{"@type":"WebPage","@id":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/mos-capacitor-changing-the-dc-permittivity-of-the-oxide\/#webpage","url":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/mos-capacitor-changing-the-dc-permittivity-of-the-oxide\/","name":"MOS capacitor \u2013 changing the DC permittivity of the oxide | Ansys Learning Forum","description":"I have a question regarding your MOS capacitor example:https:\/\/optics.ansys.com\/hc\/en-us\/articles\/360042760633-Metal-oxide-semiconductor-MOS-capacitor I took your example file and introduced the following changes:1. 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I increased the doping of Si to 10^23;","og:url":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/mos-capacitor-changing-the-dc-permittivity-of-the-oxide\/","og:image":"https:\/\/innovationspace.ansys.com\/forum\/wp-content\/uploads\/sites\/2\/2024\/10\/25-10-2024-1729897755-dc_600.PNG","og:image:secure_url":"https:\/\/innovationspace.ansys.com\/forum\/wp-content\/uploads\/sites\/2\/2024\/10\/25-10-2024-1729897755-dc_600.PNG","article:published_time":"2024-10-25T23:11:11+00:00","article:modified_time":"2024-10-25T23:11:11+00:00","twitter:card":"summary_large_image","twitter:title":"MOS capacitor \u2013 changing the DC permittivity of the oxide | Ansys Learning Forum","twitter:description":"I have a question regarding your MOS capacitor example:https:\/\/optics.ansys.com\/hc\/en-us\/articles\/360042760633-Metal-oxide-semiconductor-MOS-capacitor I took your example file and introduced the following changes:1. I increased the doping of Si to 10^23;","twitter:image":"https:\/\/innovationspace.ansys.com\/forum\/wp-content\/uploads\/sites\/2\/2024\/10\/25-10-2024-1729897755-dc_600.PNG"},"aioseo_meta_data":{"post_id":"391434","title":null,"description":null,"keywords":null,"keyphrases":null,"primary_term":null,"canonical_url":null,"og_title":null,"og_description":null,"og_object_type":"default","og_image_type":"content","og_image_url":null,"og_image_width":null,"og_image_height":null,"og_image_custom_url":null,"og_image_custom_fields":null,"og_video":null,"og_custom_url":null,"og_article_section":null,"og_article_tags":null,"twitter_use_og":true,"twitter_card":"default","twitter_image_type":"default","twitter_image_url":null,"twitter_image_custom_url":null,"twitter_image_custom_fields":null,"twitter_title":null,"twitter_description":null,"schema":{"blockGraphs":[],"customGraphs":[],"default":{"data":{"Article":[],"Course":[],"Dataset":[],"FAQPage":[],"Movie":[],"Person":[],"Product":[],"ProductReview":[],"Car":[],"Recipe":[],"Service":[],"SoftwareApplication":[],"WebPage":[]},"graphName":"","isEnabled":true},"graphs":[]},"schema_type":"default","schema_type_options":null,"pillar_content":false,"robots_default":true,"robots_noindex":false,"robots_noarchive":false,"robots_nosnippet":false,"robots_nofollow":false,"robots_noimageindex":false,"robots_noodp":false,"robots_notranslate":false,"robots_max_snippet":null,"robots_max_videopreview":null,"robots_max_imagepreview":"large","priority":null,"frequency":null,"local_seo":null,"limit_modified_date":false,"created":"2024-10-28 16:21:28","updated":"2024-10-28 16:21:28","ai":null,"breadcrumb_settings":null,"seo_analyzer_scan_date":null},"aioseo_breadcrumb":"<div class=\"aioseo-breadcrumbs\"><span class=\"aioseo-breadcrumb\">\n\t\t\t<a href=\"https:\/\/innovationspace.ansys.com\/forum\" title=\"Home\">Home<\/a>\n\t\t<\/span><span class=\"aioseo-breadcrumb-separator\">&raquo;<\/span><span class=\"aioseo-breadcrumb\">\n\t\t\t<a href=\"https:\/\/innovationspace.ansys.com\/forum\/topics\/\" title=\"Topics\">Topics<\/a>\n\t\t<\/span><span class=\"aioseo-breadcrumb-separator\">&raquo;<\/span><span class=\"aioseo-breadcrumb\">\n\t\t\tMOS capacitor \u2013 changing the DC permittivity of the oxide\n\t\t<\/span><\/div>","aioseo_breadcrumb_json":[{"label":"Home","link":"https:\/\/innovationspace.ansys.com\/forum"},{"label":"Topics","link":"https:\/\/innovationspace.ansys.com\/forum\/topics\/"},{"label":"MOS capacitor &#8211; changing the DC permittivity of the oxide","link":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/mos-capacitor-changing-the-dc-permittivity-of-the-oxide\/"}],"acf":[],"custom_fields":[{"0":{"_bbp_subscription":["192317","2592"],"_bbp_author_ip":["131.215.220.163"],"_btv_view_count":["186"],"_bbp_topic_status":["unanswered"],"_bbp_topic_id":["391434"],"_bbp_forum_id":["27833"],"_bbp_engagement":["2592","192317"],"_bbp_voice_count":["2"],"_bbp_reply_count":["1"],"_bbp_last_reply_id":["391640"],"_bbp_last_active_id":["391640"],"_bbp_last_active_time":["2024-10-28 17:52:37"]},"test":"sokhoyancaltech-edu"}],"_links":{"self":[{"href":"https:\/\/innovationspace.ansys.com\/forum\/wp-json\/wp\/v2\/topics\/391434","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/innovationspace.ansys.com\/forum\/wp-json\/wp\/v2\/topics"}],"about":[{"href":"https:\/\/innovationspace.ansys.com\/forum\/wp-json\/wp\/v2\/types\/topic"}],"version-history":[{"count":0,"href":"https:\/\/innovationspace.ansys.com\/forum\/wp-json\/wp\/v2\/topics\/391434\/revisions"}],"wp:attachment":[{"href":"https:\/\/innovationspace.ansys.com\/forum\/wp-json\/wp\/v2\/media?parent=391434"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}