{"id":388227,"date":"2024-10-04T21:02:04","date_gmt":"2024-10-04T21:02:04","guid":{"rendered":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/ingaasinalas-apd-unable-to-reach-avalanche-breakdown\/"},"modified":"2024-10-07T15:49:02","modified_gmt":"2024-10-07T15:49:02","slug":"ingaasinalas-apd-unable-to-reach-avalanche-breakdown","status":"publish","type":"topic","link":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/ingaasinalas-apd-unable-to-reach-avalanche-breakdown\/","title":{"rendered":"InGaAs\/InAlAs APD &#8211; Unable to reach avalanche breakdown"},"content":{"rendered":"<p>&lt;p&gt;&lt;p&gt;Hi there,&lt;\/p&gt;&lt;p&gt;I am trying to replicate an InGaAs\/InAlAs layer stack in Lumerical CHARGE based on this paper: https:\/\/link.springer.com\/article\/10.1186\/s11671-016-1815-9#Tab1&lt;\/p&gt;&lt;p&gt;<img loading=\"lazy\" decoding=\"async\" src=\"https:\/\/media.springernature.com\/lw685\/springer-static\/image\/art%3A10.1186%2Fs11671-016-1815-9\/MediaObjects\/11671_2016_1815_Fig1_HTML.gif\" alt=\"figure 1\" width=\"300\" height=\"365\" \/>&lt;\/p&gt;&lt;p&gt;When I tried running the electrical simulation for a 10um x 10um mesa with a voltage sweep (step size = 0.5V), my simulation converged (broke down) at V = 15.625 mV when the expected breakdown was at V = -25 V. I am not sure why this is happening as I set the min edge length to 0.1um. I have the following settings for the solver:&lt;\/p&gt;&lt;p&gt;<img decoding=\"async\" src=\"https:\/\/innovationspace.ansys.com\/forum\/wp-content\/uploads\/sites\/2\/2024\/10\/04-10-2024-1728075472-mceclip0.png\" \/>&lt;\/p&gt;&lt;p&gt;<img decoding=\"async\" src=\"https:\/\/innovationspace.ansys.com\/forum\/wp-content\/uploads\/sites\/2\/2024\/10\/04-10-2024-1728075615-mceclip2.png\" \/>&lt;\/p&gt;&lt;p&gt;I enabled the following recombination models for InGaAs, InAlAs, InGaAlAs, and InP with the Hurkx model for trap-assisted recombination and band-to-band tunnelling. I can reach avalanche breakdown for a different InGaAs\/InAlAs layer stack so I am unsure why I am not able to replicate avalanche breakdown based on the paper (The authors modelled their device in Silvaco).&lt;\/p&gt;&lt;p&gt;<img decoding=\"async\" src=\"https:\/\/innovationspace.ansys.com\/forum\/wp-content\/uploads\/sites\/2\/2024\/10\/04-10-2024-1728075546-mceclip1.png\" \/>&lt;\/p&gt;&lt;\/p&gt;<\/p>\n","protected":false},"template":"","class_list":["post-388227","topic","type-topic","status-publish","hentry","topic-tag-designsemiconductor-1","topic-tag-LumericalCHARGE-1","topic-tag-Photodetector-1"],"aioseo_notices":[],"aioseo_head":"\n\t\t<!-- All in One SEO 4.9.10 - aioseo.com -->\n\t<meta name=\"description\" content=\"Hi there,I am trying to replicate an InGaAs\/InAlAs layer stack in Lumerical CHARGE based on this paper: https:\/\/link.springer.com\/article\/10.1186\/s11671-016-1815-9#Tab1When I tried running the electrical simulation for a 10um x 10um mesa with a voltage 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there,I am trying to replicate an InGaAs\/InAlAs layer stack in Lumerical CHARGE based on this paper: https:\/\/link.springer.com\/article\/10.1186\/s11671-016-1815-9#Tab1When I tried running the electrical simulation for a 10um x 10um mesa with a voltage sweep (step size = 0.5V), my simulation converged (broke down) at V = 15.625 mV when the expected breakdown was at 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