{"id":379636,"date":"2024-08-21T14:17:23","date_gmt":"2024-08-21T14:17:23","guid":{"rendered":"https:\/\/innovationspace.ansys.com\/forum\/?post_type=topic&p=379636"},"modified":"2024-08-21T14:17:23","modified_gmt":"2024-08-21T14:17:23","slug":"charge-reproduced-results-not-matching-the-research-article-result","status":"publish","type":"topic","link":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/charge-reproduced-results-not-matching-the-research-article-result\/","title":{"rendered":"CHARGE: Reproduced results not matching the research article result."},"content":{"rendered":"

Dear Sir\/Madam,<\/p>\n

I am attempting to reproduce the results from the article “Tunable all-dielectric metasurface for phase modulation of the reflected and transmitted light via permittivity tuning of indium tin oxide.” In the article, they used Lumerical Device to perform the simulations. I have attached the unit cell provided in the paper alongside the unit cell I designed using Charge simulations.<\/p>\n

The unit cell consists of a SiO2 substrate, on which a Si slab is placed. On top of the Si slab, there is an ITO layer, followed by an Al2O3 layer, and finally, doped-Si resonators. Using the electrical connection boundary condition, the voltage is applied between the doped-Si resonator and the ITO layer. The electrical properties of the Indium Tin Oxide (ITO) and the doped-Si were mentioned in the supplementary notes of the article. I used those properties to create the ITO and doped-Si in the material section.<\/p>\n

In the article, ITO was degenerately doped with an n-type dopant at a concentration of 3*10^20 cm^-3, and the doped-Si was doped with an n-type dopant at a concentration of 1*10^19 cm^-3. I used constant doping as it was mentioned that the ITO and doped-Si were uniformly doped in the supplementary notes. With constant doping, I ran the simulation and encountered a “Job right error.” To resolve this, I changed the doping method from constant to diffusion doping and was able to run the simulations.<\/p>\n

After doping the ITO and Si resonators, I attempted to sweep the voltage from 0 V to 16 V to observe the charge distributions. However, the results I obtained do not match the results in the article I am trying to reproduce; there is a significant discrepancy. I have attached both my results and those from the article for comparison.<\/p>\n

Could someone please advise on what the potential error might be?<\/p>\n

Kind regards,
Bharathy J<\/p>\n

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 <\/p><\/p>\n","protected":false},"template":"","class_list":["post-379636","topic","type-topic","status-publish","hentry"],"aioseo_notices":[],"aioseo_head":"\n\t\t\n\t\n\t\n\t\n\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t