{"id":369565,"date":"2024-06-03T11:23:15","date_gmt":"2024-06-03T11:23:15","guid":{"rendered":"\/forum\/forums\/topic\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\/"},"modified":"2024-06-03T11:23:15","modified_gmt":"2024-06-03T11:23:15","slug":"zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw","status":"closed","type":"topic","link":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\/","title":{"rendered":"Zo when applying bulk conductivity to the silicon substrate of finite-ground CPW"},"content":{"rendered":"<p><img decoding=\"async\" src=\"\/forum\/wp-content\/uploads\/sites\/2\/2024\/06\/03-06-2024-1717413012-characteristic impedance.png\" alt=\"\"><img decoding=\"async\" src=\"\/forum\/wp-content\/uploads\/sites\/2\/2024\/06\/03-06-2024-1717413033-fg_cpw.png\" alt=\"\"><\/p>\n<p>A SiO2 dielectric layer is placed on a silicon substrate, and on top of that are ground and signal planes made of copper.<\/p>\n<p>The silicon substrate is 100 &mu;m thick, the SiO2 layer is 700 nm thick, and the ground and signal planes are 1 &mu;m thick.<\/p>\n<p>&nbsp;The structure is ungrounded, meaning there is no ground plane beneath the substrate.<\/p>\n<p>When a conductivity of 10 S\/m is applied to the silicon substrate made of Si material, the characteristic impedance appears symmetrical about the X-axis.&nbsp;<\/p>\n<p>Is this normal if I want to adjust it to achieve 50 ohms?<\/p>\n","protected":false},"template":"","class_list":["post-369565","topic","type-topic","status-closed","hentry"],"aioseo_notices":[],"aioseo_head":"\n\t\t<!-- All in One SEO 4.9.10 - aioseo.com -->\n\t<meta name=\"description\" content=\"A SiO2 dielectric layer is placed on a silicon substrate, and on top of that are ground and signal planes made of copper.The silicon substrate is 100 \u03bcm thick, the SiO2 layer is 700 nm thick, and the ground and signal planes are 1 \u03bcm thick. The structure is ungrounded, meaning there is no ground plane\" \/>\n\t<meta name=\"robots\" content=\"max-image-preview:large\" \/>\n\t<link rel=\"canonical\" href=\"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\/\" \/>\n\t<meta name=\"generator\" content=\"All in One SEO (AIOSEO) 4.9.10\" \/>\n\t\t<meta property=\"og:locale\" content=\"en_US\" \/>\n\t\t<meta property=\"og:site_name\" content=\"Ansys Learning Forum | Ansys Innovation Space\" \/>\n\t\t<meta property=\"og:type\" content=\"article\" \/>\n\t\t<meta property=\"og:title\" content=\"Zo when applying bulk conductivity to the silicon substrate of finite-ground CPW | Ansys Learning Forum\" \/>\n\t\t<meta property=\"og:description\" content=\"A SiO2 dielectric layer is placed on a silicon substrate, and on top of that are ground and signal planes made of copper.The silicon substrate is 100 \u03bcm thick, the SiO2 layer is 700 nm thick, and the ground and signal planes are 1 \u03bcm thick. The structure is ungrounded, meaning there is no ground plane\" \/>\n\t\t<meta property=\"og:url\" content=\"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\/\" \/>\n\t\t<meta property=\"og:image\" content=\"https:\/\/innovationspace.ansys.com\/forum\/forum\/wp-content\/uploads\/sites\/2\/2024\/06\/03-06-2024-1717413012-characteristic%20impedance.png\" \/>\n\t\t<meta property=\"og:image:secure_url\" content=\"https:\/\/innovationspace.ansys.com\/forum\/forum\/wp-content\/uploads\/sites\/2\/2024\/06\/03-06-2024-1717413012-characteristic%20impedance.png\" \/>\n\t\t<meta property=\"article:published_time\" content=\"2024-06-03T11:23:15+00:00\" \/>\n\t\t<meta property=\"article:modified_time\" content=\"2024-06-03T11:23:15+00:00\" \/>\n\t\t<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n\t\t<meta name=\"twitter:title\" content=\"Zo when applying bulk conductivity to the silicon substrate of finite-ground CPW | Ansys Learning Forum\" \/>\n\t\t<meta name=\"twitter:description\" content=\"A SiO2 dielectric layer is placed on a silicon substrate, and on top of that are ground and signal planes made of copper.The silicon substrate is 100 \u03bcm thick, the SiO2 layer is 700 nm thick, and the ground and signal planes are 1 \u03bcm thick. The structure is ungrounded, meaning there is no ground plane\" \/>\n\t\t<meta name=\"twitter:image\" content=\"https:\/\/innovationspace.ansys.com\/forum\/forum\/wp-content\/uploads\/sites\/2\/2024\/06\/03-06-2024-1717413012-characteristic impedance.png\" \/>\n\t\t<script type=\"application\/ld+json\" class=\"aioseo-schema\">\n\t\t\t{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/forums\\\/topic\\\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\\\/#breadcrumblist\",\"itemListElement\":[{\"@type\":\"ListItem\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum#listItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\",\"nextItem\":{\"@type\":\"ListItem\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/topics\\\/#listItem\",\"name\":\"Topics\"}},{\"@type\":\"ListItem\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/topics\\\/#listItem\",\"position\":2,\"name\":\"Topics\",\"item\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/topics\\\/\",\"nextItem\":{\"@type\":\"ListItem\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/forums\\\/topic\\\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\\\/#listItem\",\"name\":\"Zo when applying bulk conductivity to the silicon substrate of finite-ground CPW\"},\"previousItem\":{\"@type\":\"ListItem\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum#listItem\",\"name\":\"Home\"}},{\"@type\":\"ListItem\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/forums\\\/topic\\\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\\\/#listItem\",\"position\":3,\"name\":\"Zo when applying bulk conductivity to the silicon substrate of finite-ground CPW\",\"previousItem\":{\"@type\":\"ListItem\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/topics\\\/#listItem\",\"name\":\"Topics\"}}]},{\"@type\":\"Organization\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/#organization\",\"name\":\"Ansys Learning Forum\",\"description\":\"Ansys Innovation Space\",\"url\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/forums\\\/topic\\\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\\\/#webpage\",\"url\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/forums\\\/topic\\\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\\\/\",\"name\":\"Zo when applying bulk conductivity to the silicon substrate of finite-ground CPW | Ansys Learning Forum\",\"description\":\"A SiO2 dielectric layer is placed on a silicon substrate, and on top of that are ground and signal planes made of copper.The silicon substrate is 100 \\u03bcm thick, the SiO2 layer is 700 nm thick, and the ground and signal planes are 1 \\u03bcm thick. The structure is ungrounded, meaning there is no ground plane\",\"inLanguage\":\"en-US\",\"isPartOf\":{\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/#website\"},\"breadcrumb\":{\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/forums\\\/topic\\\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\\\/#breadcrumblist\"},\"datePublished\":\"2024-06-03T11:23:15+00:00\",\"dateModified\":\"2024-06-03T11:23:15+00:00\"},{\"@type\":\"WebSite\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/#website\",\"url\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/\",\"name\":\"Ansys Learning Forum\",\"description\":\"Ansys Innovation Space\",\"inLanguage\":\"en-US\",\"publisher\":{\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/#organization\"}}]}\n\t\t<\/script>\n\t\t<!-- All in One SEO -->\n\n","aioseo_head_json":{"title":"Zo when applying bulk conductivity to the silicon substrate of finite-ground CPW | Ansys Learning Forum","description":"A SiO2 dielectric layer is placed on a silicon substrate, and on top of that are ground and signal planes made of copper.The silicon substrate is 100 \u03bcm thick, the SiO2 layer is 700 nm thick, and the ground and signal planes are 1 \u03bcm thick. The structure is ungrounded, meaning there is no ground plane","canonical_url":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\/","robots":"max-image-preview:large","keywords":"","webmasterTools":{"miscellaneous":""},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"BreadcrumbList","@id":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\/#breadcrumblist","itemListElement":[{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum#listItem","position":1,"name":"Home","item":"https:\/\/innovationspace.ansys.com\/forum","nextItem":{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum\/topics\/#listItem","name":"Topics"}},{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum\/topics\/#listItem","position":2,"name":"Topics","item":"https:\/\/innovationspace.ansys.com\/forum\/topics\/","nextItem":{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\/#listItem","name":"Zo when applying bulk conductivity to the silicon substrate of finite-ground CPW"},"previousItem":{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum#listItem","name":"Home"}},{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\/#listItem","position":3,"name":"Zo when applying bulk conductivity to the silicon substrate of finite-ground CPW","previousItem":{"@type":"ListItem","@id":"https:\/\/innovationspace.ansys.com\/forum\/topics\/#listItem","name":"Topics"}}]},{"@type":"Organization","@id":"https:\/\/innovationspace.ansys.com\/forum\/#organization","name":"Ansys Learning Forum","description":"Ansys Innovation Space","url":"https:\/\/innovationspace.ansys.com\/forum\/"},{"@type":"WebPage","@id":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\/#webpage","url":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\/","name":"Zo when applying bulk conductivity to the silicon substrate of finite-ground CPW | Ansys Learning Forum","description":"A SiO2 dielectric layer is placed on a silicon substrate, and on top of that are ground and signal planes made of copper.The silicon substrate is 100 \u03bcm thick, the SiO2 layer is 700 nm thick, and the ground and signal planes are 1 \u03bcm thick. The structure is ungrounded, meaning there is no ground plane","inLanguage":"en-US","isPartOf":{"@id":"https:\/\/innovationspace.ansys.com\/forum\/#website"},"breadcrumb":{"@id":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\/#breadcrumblist"},"datePublished":"2024-06-03T11:23:15+00:00","dateModified":"2024-06-03T11:23:15+00:00"},{"@type":"WebSite","@id":"https:\/\/innovationspace.ansys.com\/forum\/#website","url":"https:\/\/innovationspace.ansys.com\/forum\/","name":"Ansys Learning Forum","description":"Ansys Innovation Space","inLanguage":"en-US","publisher":{"@id":"https:\/\/innovationspace.ansys.com\/forum\/#organization"}}]},"og:locale":"en_US","og:site_name":"Ansys Learning Forum | Ansys Innovation Space","og:type":"article","og:title":"Zo when applying bulk conductivity to the silicon substrate of finite-ground CPW | Ansys Learning Forum","og:description":"A SiO2 dielectric layer is placed on a silicon substrate, and on top of that are ground and signal planes made of copper.The silicon substrate is 100 \u03bcm thick, the SiO2 layer is 700 nm thick, and the ground and signal planes are 1 \u03bcm thick. The structure is ungrounded, meaning there is no ground plane","og:url":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\/","og:image":"https:\/\/innovationspace.ansys.com\/forum\/forum\/wp-content\/uploads\/sites\/2\/2024\/06\/03-06-2024-1717413012-characteristic%20impedance.png","og:image:secure_url":"https:\/\/innovationspace.ansys.com\/forum\/forum\/wp-content\/uploads\/sites\/2\/2024\/06\/03-06-2024-1717413012-characteristic%20impedance.png","article:published_time":"2024-06-03T11:23:15+00:00","article:modified_time":"2024-06-03T11:23:15+00:00","twitter:card":"summary_large_image","twitter:title":"Zo when applying bulk conductivity to the silicon substrate of finite-ground CPW | Ansys Learning Forum","twitter:description":"A SiO2 dielectric layer is placed on a silicon substrate, and on top of that are ground and signal planes made of copper.The silicon substrate is 100 \u03bcm thick, the SiO2 layer is 700 nm thick, and the ground and signal planes are 1 \u03bcm thick. The structure is ungrounded, meaning there is no ground plane","twitter:image":"https:\/\/innovationspace.ansys.com\/forum\/forum\/wp-content\/uploads\/sites\/2\/2024\/06\/03-06-2024-1717413012-characteristic impedance.png"},"aioseo_meta_data":{"post_id":"369565","title":null,"description":null,"keywords":null,"keyphrases":null,"primary_term":null,"canonical_url":null,"og_title":null,"og_description":null,"og_object_type":"default","og_image_type":"content","og_image_url":null,"og_image_width":null,"og_image_height":null,"og_image_custom_url":null,"og_image_custom_fields":null,"og_video":null,"og_custom_url":null,"og_article_section":null,"og_article_tags":null,"twitter_use_og":true,"twitter_card":"default","twitter_image_type":"default","twitter_image_url":null,"twitter_image_custom_url":null,"twitter_image_custom_fields":null,"twitter_title":null,"twitter_description":null,"schema":{"blockGraphs":[],"customGraphs":[],"default":{"data":{"Article":[],"Course":[],"Dataset":[],"FAQPage":[],"Movie":[],"Person":[],"Product":[],"ProductReview":[],"Car":[],"Recipe":[],"Service":[],"SoftwareApplication":[],"WebPage":[]},"graphName":"","isEnabled":true},"graphs":[]},"schema_type":"default","schema_type_options":null,"pillar_content":false,"robots_default":true,"robots_noindex":false,"robots_noarchive":false,"robots_nosnippet":false,"robots_nofollow":false,"robots_noimageindex":false,"robots_noodp":false,"robots_notranslate":false,"robots_max_snippet":null,"robots_max_videopreview":null,"robots_max_imagepreview":"large","priority":null,"frequency":null,"local_seo":null,"limit_modified_date":false,"created":"2024-10-28 16:39:46","updated":"2024-10-28 16:39:46","ai":null,"breadcrumb_settings":null,"seo_analyzer_scan_date":null},"aioseo_breadcrumb":"<div class=\"aioseo-breadcrumbs\"><span class=\"aioseo-breadcrumb\">\n\t\t\t<a href=\"https:\/\/innovationspace.ansys.com\/forum\" title=\"Home\">Home<\/a>\n\t\t<\/span><span class=\"aioseo-breadcrumb-separator\">&raquo;<\/span><span class=\"aioseo-breadcrumb\">\n\t\t\t<a href=\"https:\/\/innovationspace.ansys.com\/forum\/topics\/\" title=\"Topics\">Topics<\/a>\n\t\t<\/span><span class=\"aioseo-breadcrumb-separator\">&raquo;<\/span><span class=\"aioseo-breadcrumb\">\n\t\t\tZo when applying bulk conductivity to the silicon substrate of finite-ground CPW\n\t\t<\/span><\/div>","aioseo_breadcrumb_json":[{"label":"Home","link":"https:\/\/innovationspace.ansys.com\/forum"},{"label":"Topics","link":"https:\/\/innovationspace.ansys.com\/forum\/topics\/"},{"label":"Zo when applying bulk conductivity to the silicon substrate of finite-ground CPW","link":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/zo-when-applying-bulk-conductivity-to-the-silicon-substrate-of-finite-ground-cpw\/"}],"acf":[],"custom_fields":[{"0":{"_bbp_subscription":["49512","109997"],"_bbp_author_ip":["23.216.133.155"]," _bbp_last_reply_id":["0"]," _bbp_likes_count":["0"],"_btv_view_count":["756"],"_bbp_topic_status":["unanswered"],"_bbp_topic_id":["369565"],"_bbp_forum_id":["27793"],"_bbp_engagement":["49512","109997"],"_bbp_voice_count":["2"],"_bbp_reply_count":["1"],"_bbp_last_reply_id":["377665"],"_bbp_last_active_id":["377665"],"_bbp_last_active_time":["2024-08-08 08:59:45"]},"test":"nbr6770000naver-com"}],"_links":{"self":[{"href":"https:\/\/innovationspace.ansys.com\/forum\/wp-json\/wp\/v2\/topics\/369565","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/innovationspace.ansys.com\/forum\/wp-json\/wp\/v2\/topics"}],"about":[{"href":"https:\/\/innovationspace.ansys.com\/forum\/wp-json\/wp\/v2\/types\/topic"}],"version-history":[{"count":0,"href":"https:\/\/innovationspace.ansys.com\/forum\/wp-json\/wp\/v2\/topics\/369565\/revisions"}],"wp:attachment":[{"href":"https:\/\/innovationspace.ansys.com\/forum\/wp-json\/wp\/v2\/media?parent=369565"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}