{"id":311622,"date":"2023-10-16T11:19:41","date_gmt":"2023-10-16T11:19:41","guid":{"rendered":"\/forum\/forums\/topic\/bandstructure-of-radial-diffusion-doping-in-silicon-pillar\/"},"modified":"2023-10-16T11:19:41","modified_gmt":"2023-10-16T11:19:41","slug":"bandstructure-of-radial-diffusion-doping-in-silicon-pillar","status":"closed","type":"topic","link":"https:\/\/innovationspace.ansys.com\/forum\/forums\/topic\/bandstructure-of-radial-diffusion-doping-in-silicon-pillar\/","title":{"rendered":"Bandstructure of radial diffusion doping in silicon pillar"},"content":{"rendered":"

I created a radial diffusion doping in silicon pillar by referring to the link below.<\/p>\n

https:\/\/optics.ansys.com\/hc\/en-us\/articles\/4412958409491-How-to-create-a-radial-diffusion-doping-profile-in-CHARGE<\/a><\/p>\n

 <\/p>\n

My CHARGE includes band monitor, constant background doping (n-type) and radial doping (p-type).<\/p>\n

I ran the simulation and found that the radial p-n junction is formed well.<\/p>\n

<\/p>\n

However, the band monitor showed no band bending across the pillar; it only showed a flat band structure.<\/p>\n

<\/p>\n

<\/p>\n

Why the band bending does not occur despite the radial p-n junction being observed in doping visualization?<\/p>\n

 <\/p>\n

I have attached my .ldev file and .lsf file link so that you can check my CHARGE setting.<\/p>\n

.ldev: https:\/\/drive.google.com\/file\/d\/1U0_d0V2yQ3m-4_yU3GHDtUR62hdVTiUH\/view?usp=sharing<\/a><\/p>\n

.lsf: https:\/\/drive.google.com\/file\/d\/1I9dfVqWH71awbBF6UxrsHfIKW94DT7a-\/view?usp=sharing<\/a><\/p>\n","protected":false},"template":"","class_list":["post-311622","topic","type-topic","status-closed","hentry","topic-tag-charge","topic-tag-doping"],"aioseo_notices":[],"aioseo_head":"\n\t\t\n\t\n\t\n\t\n\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t\n\t\t