


{"id":393036,"date":"2024-11-06T17:05:04","date_gmt":"2024-11-06T17:05:04","guid":{"rendered":"https:\/\/innovationspace.ansys.com\/forum\/forums\/reply\/393036\/"},"modified":"2024-11-06T17:05:04","modified_gmt":"2024-11-06T17:05:04","slug":"393036","status":"publish","type":"reply","link":"https:\/\/innovationspace.ansys.com\/forum\/forums\/reply\/393036\/","title":{"rendered":"Reply To: Electrostatic simulations of a modulator"},"content":{"rendered":"<p>&lt;p&gt;Thanks for the comment. However, for me is still unclear why replacing the semiconducting material with an insulator of the same DC permittivity as the semiconductor yields drastically different results. Shoudn&#8217;t results be identical if no current flows through the system?&lt;\/p&gt;<\/p>\n","protected":false},"template":"","class_list":["post-393036","reply","type-reply","status-publish","hentry"],"aioseo_notices":[],"aioseo_head":"\n\t\t<!-- All in One SEO 4.9.10 - aioseo.com -->\n\t<meta name=\"description\" content=\"Thanks for the comment. However, for me is still unclear why replacing the semiconducting material with an insulator of the same DC permittivity as the semiconductor yields drastically different results. Shoudn&#039;t results be identical if no current flows through the system?\" \/>\n\t<meta name=\"robots\" content=\"max-image-preview:large\" \/>\n\t<link rel=\"canonical\" href=\"https:\/\/innovationspace.ansys.com\/forum\/forums\/reply\/393036\/\" \/>\n\t<meta name=\"generator\" content=\"All in One SEO (AIOSEO) 4.9.10\" \/>\n\t\t<meta property=\"og:locale\" content=\"en_US\" \/>\n\t\t<meta property=\"og:site_name\" content=\"Ansys Learning Forum | Ansys Innovation Space\" \/>\n\t\t<meta property=\"og:type\" content=\"article\" \/>\n\t\t<meta property=\"og:title\" content=\"Reply To: Electrostatic simulations of a modulator | Ansys Learning Forum\" \/>\n\t\t<meta property=\"og:description\" content=\"Thanks for the comment. However, for me is still unclear why replacing the semiconducting material with an insulator of the same DC permittivity as the semiconductor yields drastically different results. Shoudn&#039;t results be identical if no current flows through the system?\" \/>\n\t\t<meta property=\"og:url\" content=\"https:\/\/innovationspace.ansys.com\/forum\/forums\/reply\/393036\/\" \/>\n\t\t<meta property=\"article:published_time\" content=\"2024-11-06T17:05:04+00:00\" \/>\n\t\t<meta property=\"article:modified_time\" content=\"2024-11-06T17:05:04+00:00\" \/>\n\t\t<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n\t\t<meta name=\"twitter:title\" content=\"Reply To: Electrostatic simulations of a modulator | Ansys Learning Forum\" \/>\n\t\t<meta name=\"twitter:description\" content=\"Thanks for the comment. However, for me is still unclear why replacing the semiconducting material with an insulator of the same DC permittivity as the semiconductor yields drastically different results. Shoudn&#039;t results be identical if no current flows through the system?\" \/>\n\t\t<script type=\"application\/ld+json\" class=\"aioseo-schema\">\n\t\t\t{\"@context\":\"https:\\\/\\\/schema.org\",\"@graph\":[{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/forums\\\/reply\\\/393036\\\/#breadcrumblist\",\"itemListElement\":[{\"@type\":\"ListItem\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum#listItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\",\"nextItem\":{\"@type\":\"ListItem\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/forums\\\/reply\\\/393036\\\/#listItem\",\"name\":\"Reply To: Electrostatic simulations of a modulator\"}},{\"@type\":\"ListItem\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/forums\\\/reply\\\/393036\\\/#listItem\",\"position\":2,\"name\":\"Reply To: Electrostatic simulations of a modulator\",\"previousItem\":{\"@type\":\"ListItem\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum#listItem\",\"name\":\"Home\"}}]},{\"@type\":\"Organization\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/#organization\",\"name\":\"Ansys Learning Forum\",\"description\":\"Ansys Innovation Space\",\"url\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/\"},{\"@type\":\"WebPage\",\"@id\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/forums\\\/reply\\\/393036\\\/#webpage\",\"url\":\"https:\\\/\\\/innovationspace.ansys.com\\\/forum\\\/forums\\\/reply\\\/393036\\\/\",\"name\":\"Reply To: Electrostatic simulations of a modulator | Ansys Learning Forum\",\"description\":\"Thanks for the comment. 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