Reply To: 3D CHARGE Simulation for Variable-Width Ring MRM in FDTD

[Guilin Sun]

You can simulate 3D device in CHARGE. But care should be taken as it will significantly increase the memory requirement and consequently slow down the simulation.  

FDTD solves Maxwell Equations which do not have the variable of applied voltage. Thus you will need to perform CHARGE simulation first. Similarly for INTERCONNET and MODE.

Once the result is obtained from CHARGE you can import the np density attribute to FDTD, which has the voltage and its index which you can sweep them to get different transission under different voltage.